{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9793686","patent":{"patent_number":"US-9793686","title":"Semiconductor device and fabrication method","assignee":null,"inventors":[],"filing_date":"2016-04-15T00:00:00.000Z","publication_date":"2017-10-17T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":23,"abstract":"A semiconductor device comprising a silicon substrate on which is grown a <100 nm thick epilayer of AlAs or related compound, followed by a compound semiconductor other than GaN buffer layer. Further III-V compound semiconductor structures can be epitaxially grown on top. The AlAs epilayer reduces the formation and propagation of defects from the interface with the silicon, and so can improve the performance of an active structure grown on top."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and fabrication method","description":"A semiconductor device comprising a silicon substrate on which is grown a <100 nm thick epilayer of AlAs or related compound, followed by a compound semiconductor other than GaN buffer layer. Further ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9793686","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9793686","citation_suggestion":"Patentable. \"Semiconductor device and fabrication method\" (US-9793686). https://patentable.app/patents/US-9793686","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9793686","json":"https://patentable.app/api/llm-context/US-9793686","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:37:58.408Z"}