{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9796582","patent":{"patent_number":"US-9796582","title":"Method for integrating complementary metal-oxide-semiconductor (CMOS) devices with microelectromechanical systems (MEMS) devices using a flat surface above a sacrificial layer","assignee":null,"inventors":[],"filing_date":"2016-11-29T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A method for integrating complementary metal-oxide-semiconductor (CMOS) devices with a microelectromechanical systems (MEMS) device using a flat surface above a sacrificial layer is provided. In some embodiments, a back-end-of-line (BEOL) interconnect structure is formed covering a semiconductor substrate, where the BEOL interconnect structure comprises a first dielectric region. A sacrificial layer is formed over the first dielectric region, and a second dielectric region is formed covering the sacrificial layer and the first dielectric region. A planarization is performed into an upper surface of the second dielectric region to planarize the upper surface. A MEMS structure is formed on the planar upper surface of the second dielectric region. A cavity etch is performed into the sacrificial layer, through the MEMS structure, to remove the sacrificial layer and to form a cavity in place of the sacrificial layer. An integrated circuit (IC) resulting from the method is also provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for integrating complementary metal-oxide-semiconductor (CMOS) devices with microelectromechanical systems (MEMS) devices using a flat surface above a sacrificial layer","description":"A method for integrating complementary metal-oxide-semiconductor (CMOS) devices with a microelectromechanical systems (MEMS) device using a flat surface above a sacrificial layer is provided. In some ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9796582","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9796582","citation_suggestion":"Patentable. \"Method for integrating complementary metal-oxide-semiconductor (CMOS) devices with microelectromechanical systems (MEMS) devices using a flat surface above a sacrificial layer\" (US-9796582). https://patentable.app/patents/US-9796582","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9796582","json":"https://patentable.app/api/llm-context/US-9796582","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:54:04.942Z"}