{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9796739","patent":{"patent_number":"US-9796739","title":"AZA-polysilane precursors and methods for depositing films comprising same","assignee":null,"inventors":[],"filing_date":"2014-06-02T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":21,"abstract":"Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided an aza-polysilane precursor comprising at least two Si—N bonds, at least one Si—Si bond, and at least two SiH2 groups represented by the following Formula IA, IB and IC:wherein R1 and R2 are independently selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, C3 to C10 cyclic alkyl group, C3 to C10 hetero-cyclic alkyl group, a C5 to C10 aryl group, and a C3 to C10 hetero-aryl group, a C2 to C10 dialkylamino group, a C3 to C10 cyclic alkylamino group; R3 and R4 are independently selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C2 to C10 alkenyl group, a linear or branched C2 to C10 alkynyl group, C3 to C10 cyclic alkyl group, C3 to C10 hetero-cyclic alkyl group, a C5 to C10 aryl group, and a C3 to C10 hetero-aryl group, a C2 to C10 dialkylamino group, a C3 to C10 cyclic alkylamino group; wherein R1 in Formula IA cannot both be methyl, R1 and R2 in Formula IB cannot both be iso-propyl, tert-butyl, and bezenyl and R3 and R4 cannot both be methyl and phenyl."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"AZA-polysilane precursors and methods for depositing films comprising same","description":"Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided an aza-polysilane precursor comprising at least two Si—N bonds, at least one Si—Si bo","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9796739","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9796739","citation_suggestion":"Patentable. \"AZA-polysilane precursors and methods for depositing films comprising same\" (US-9796739). https://patentable.app/patents/US-9796739","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9796739","json":"https://patentable.app/api/llm-context/US-9796739","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:10:37.945Z"}