{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9797064","patent":{"patent_number":"US-9797064","title":"Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion","assignee":null,"inventors":[],"filing_date":"2013-10-18T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":9,"abstract":"A method of forming an SiC crystal including placing in an insulated graphite container a seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings contact the seed crystal on a periphery of top and bottom surfaces of the seed crystal, and where the graphite container does not contact a side surface of the seed crystal; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the graphite container in a furnace; heating the furnace; evacuating the furnace; filling the furnace with an inert gas; and maintaining the furnace to support crystal growth to thereby form the SiC crystal."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion","description":"A method of forming an SiC crystal including placing in an insulated graphite container a seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings contact the seed crysta","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9797064","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9797064","citation_suggestion":"Patentable. \"Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion\" (US-9797064). https://patentable.app/patents/US-9797064","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9797064","json":"https://patentable.app/api/llm-context/US-9797064","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:25:04.791Z"}