{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799384","patent":{"patent_number":"US-9799384","title":"Multi-bit MRAM cell and method for writing and reading to such MRAM cell","assignee":null,"inventors":[],"filing_date":"2015-04-23T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":18,"abstract":"A multi-bit magnetic random access memory (MRAM) cell including a magnetic tunnel junction including: a first magnetic storage layer, a second magnetic storage layer, a magnetic sense layer, a first spacer layer between the first magnetic storage layer and the magnetic sense layer, and a second spacer layer between the second magnetic storage layer and the sense layer. The first and second storage magnetization are switchable between m directions to store data corresponding to one of m2 logic states, with m>2. The present disclosure further concerns a method for writing and reading to the MRAM cell and to memory devices including multi-bit MRAM cells."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multi-bit MRAM cell and method for writing and reading to such MRAM cell","description":"A multi-bit magnetic random access memory (MRAM) cell including a magnetic tunnel junction including: a first magnetic storage layer, a second magnetic storage layer, a magnetic sense layer, a first s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799384","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799384","citation_suggestion":"Patentable. \"Multi-bit MRAM cell and method for writing and reading to such MRAM cell\" (US-9799384). https://patentable.app/patents/US-9799384","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799384","json":"https://patentable.app/api/llm-context/US-9799384","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:19:23.503Z"}