{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799386","patent":{"patent_number":"US-9799386","title":"STT MRAM midpoint reference cell allowing full write","assignee":null,"inventors":[],"filing_date":"2016-08-30T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":19,"abstract":"Improved STT MRAM midpoint reference cell configurations are provided. In one aspect, a STT MRAM midpoint reference cell includes: a plurality of word lines having at least one write reference word line and at least one read reference word line; a plurality of bit lines perpendicular to the word lines; at least one source line perpendicular to the bit lines; at least one first magnetic tunnel junction in series with i) a first field effect transistor gated by the write reference word line and ii) a second field effect transistor gated by the read reference word line; and at least one second magnetic tunnel junction in series with iii) a third field effect transistor gated by the write reference word line and iv) a fourth field effect transistor gated by the read reference word line. A method of operating a STT MRAM midpoint reference cell is also provided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"STT MRAM midpoint reference cell allowing full write","description":"Improved STT MRAM midpoint reference cell configurations are provided. In one aspect, a STT MRAM midpoint reference cell includes: a plurality of word lines having at least one write reference word li","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799386","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799386","citation_suggestion":"Patentable. \"STT MRAM midpoint reference cell allowing full write\" (US-9799386). https://patentable.app/patents/US-9799386","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799386","json":"https://patentable.app/api/llm-context/US-9799386","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:16:13.561Z"}