{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799410","patent":{"patent_number":"US-9799410","title":"Method for programming antifuse-type one time programmable memory cell","assignee":null,"inventors":[],"filing_date":"2016-12-28T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["G11C","G06F","G06F","G06F","G06F","G06F","G06F","G06F","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G06F","G06F","G11C","G11C","G11C","H04L"],"num_claims":9,"abstract":"A method for programming an antifuse-type OTP memory cell is provided. Firstly, a first program voltage is provided to a gate terminal of an antifuse transistor. A first bit line voltage is transmitted to the antifuse transistor. A first voltage stress with a first polarity is provided to a gate oxide layer of the antifuse transistor to form a weak path between the gate terminal and the first drain/source terminal of the antifuse transistor. Secondly, a second program voltage is provided to the gate terminal of the antifuse transistor. A second bit line voltage is transmitted to the antifuse transistor. A second voltage stress with a second polarity is provided to the gate oxide layer of the antifuse transistor. Consequently, a program current is generated along the weak path to rupture the gate oxide layer above the first drain/source terminal."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for programming antifuse-type one time programmable memory cell","description":"A method for programming an antifuse-type OTP memory cell is provided. Firstly, a first program voltage is provided to a gate terminal of an antifuse transistor. A first bit line voltage is transmitte","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799410","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799410","citation_suggestion":"Patentable. \"Method for programming antifuse-type one time programmable memory cell\" (US-9799410). https://patentable.app/patents/US-9799410","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799410","json":"https://patentable.app/api/llm-context/US-9799410","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:38:29.357Z"}