{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799512","patent":{"patent_number":"US-9799512","title":"Semiconductor substrate structures and methods for forming the same","assignee":null,"inventors":[],"filing_date":"2016-11-25T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A semiconductor substrate structure includes a seed layer on a substrate, a first gallium nitride layer on the seed layer, and a patterned first hard mask layer on the first gallium nitride layer, wherein the patterned first hard mask layer includes a first opening. The semiconductor substrate structure also includes a second gallium nitride layer in the first opening and on the patterned first hard mask layer, a patterned second hard mask layer on the second gallium nitride layer, wherein the patterned second hard mask layer includes a second opening, and at least a portion of a projection on the substrate of the first opening and a projection on the substrate of the second opening are non-overlapped. The semiconductor substrate structure further includes a third gallium nitride layer in the second opening and on the patterned second hard mask layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor substrate structures and methods for forming the same","description":"A semiconductor substrate structure includes a seed layer on a substrate, a first gallium nitride layer on the seed layer, and a patterned first hard mask layer on the first gallium nitride layer, whe","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799512","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799512","citation_suggestion":"Patentable. \"Semiconductor substrate structures and methods for forming the same\" (US-9799512). https://patentable.app/patents/US-9799512","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799512","json":"https://patentable.app/api/llm-context/US-9799512","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T19:49:30.504Z"}