{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799513","patent":{"patent_number":"US-9799513","title":"Localized elastic strain relaxed buffer","assignee":null,"inventors":[],"filing_date":"2017-01-23T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A strain relaxed buffer layer is fabricated by melting an underlying layer beneath a strained semiconductor layer, which allows the strained semiconductor layer to elastically relax. Upon recrystallization of the underlying layer, crystalline defects are trapped in the underlying layer. Semiconductor layers having different melting points, such as silicon germanium layers having different atomic percentages of germanium, are formed on a semiconductor substrate. An annealing process causes melting of only the silicon germanium layer that has the higher germanium content and therefore the lower melting point. The silicon germanium layer having the lower germanium content is elastically relaxed upon melting of the adjoining silicon germanium layer and can be used as a substrate for growing strained semiconductor layers such as channel layers of field-effect transistors."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Localized elastic strain relaxed buffer","description":"A strain relaxed buffer layer is fabricated by melting an underlying layer beneath a strained semiconductor layer, which allows the strained semiconductor layer to elastically relax. Upon recrystalliz","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799513","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799513","citation_suggestion":"Patentable. \"Localized elastic strain relaxed buffer\" (US-9799513). https://patentable.app/patents/US-9799513","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799513","json":"https://patentable.app/api/llm-context/US-9799513","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:32:42.883Z"}