{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799514","patent":{"patent_number":"US-9799514","title":"Protecting, oxidizing, and etching of material lines for use in increasing or decreasing critical dimensions of hard mask lines","assignee":null,"inventors":[],"filing_date":"2016-04-07T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":15,"abstract":"A method includes, for example, a starting semiconductor structure comprising a plurality of material lines disposed over a hard mask, and the hard mask disposed over a patternable layer, forming a first protective layer over some of the plurality of material lines, the protected material lines and the unprotected material lines having a same corresponding first critical dimension, oxidizing the unprotected material lines so that the oxidized unprotected material lines have an increased second critical dimension greater than the first critical dimension, removing the first protective layer, forming a second protective layer over some of the plurality of protected material lines having the first critical dimension and some of the oxidized material lines having the second critical dimension, and oxidizing the unprotected material lines so that the oxidized unprotected material lines have an increased third critical dimension greater than the first critical dimension."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Protecting, oxidizing, and etching of material lines for use in increasing or decreasing critical dimensions of hard mask lines","description":"A method includes, for example, a starting semiconductor structure comprising a plurality of material lines disposed over a hard mask, and the hard mask disposed over a patternable layer, forming a fi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799514","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799514","citation_suggestion":"Patentable. \"Protecting, oxidizing, and etching of material lines for use in increasing or decreasing critical dimensions of hard mask lines\" (US-9799514). https://patentable.app/patents/US-9799514","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799514","json":"https://patentable.app/api/llm-context/US-9799514","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:09:20.492Z"}