{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799519","patent":{"patent_number":"US-9799519","title":"Selective sputtering with light mass ions to sharpen sidewall of subtractively patterned conductive metal layer","assignee":null,"inventors":[],"filing_date":"2016-06-24T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"A dielectric layer is formed on a silicon substrate. A liner layer is formed on the dielectric layer. A conductive metal layer is formed on the liner layer. A first sputter etching operation is performed on the conductive metal layer, wherein the first sputter etching operation uses a first type of etch chemistry configured to subtractively pattern the conductive metal layer for a first etching time period resulting in the remaining conductive metal layer having respective sidewalls that are not substantially vertical. A second sputter etching operation is performed on the remaining conductive metal layer, wherein the second sputter etching operation uses a second type of etch chemistry configured to further subtractively pattern the remaining conductive metal layer for a second etching time period resulting in the remaining conductive metal layer having respective sidewalls that are substantially vertical. The conductive metal layer remaining after the second sputter etching operation comprises a metal interconnect."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Selective sputtering with light mass ions to sharpen sidewall of subtractively patterned conductive metal layer","description":"A dielectric layer is formed on a silicon substrate. A liner layer is formed on the dielectric layer. A conductive metal layer is formed on the liner layer. A first sputter etching operation is perfor","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799519","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799519","citation_suggestion":"Patentable. \"Selective sputtering with light mass ions to sharpen sidewall of subtractively patterned conductive metal layer\" (US-9799519). https://patentable.app/patents/US-9799519","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799519","json":"https://patentable.app/api/llm-context/US-9799519","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:18:35.525Z"}