{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799558","patent":{"patent_number":"US-9799558","title":"Method for forming conductive structure in semiconductor structure","assignee":null,"inventors":[],"filing_date":"2015-11-16T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for manufacturing a semiconductor structure is provided. The method includes forming a first dielectric layer over a substrate and forming a sacrificial layer over the first dielectric layer. The method further includes forming an opening in the sacrificial layer and etching the first dielectric layer to form a via hole through the opening. The method further includes forming a conductive structure in the via hole and the opening and removing the sacrificial layer to expose an upper portion of the conductive structure. The method further includes forming a second dielectric layer around the upper portion of the conductive material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming conductive structure in semiconductor structure","description":"A method for manufacturing a semiconductor structure is provided. The method includes forming a first dielectric layer over a substrate and forming a sacrificial layer over the first dielectric layer.","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799558","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799558","citation_suggestion":"Patentable. \"Method for forming conductive structure in semiconductor structure\" (US-9799558). https://patentable.app/patents/US-9799558","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799558","json":"https://patentable.app/api/llm-context/US-9799558","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:15:09.263Z"}