{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799559","patent":{"patent_number":"US-9799559","title":"Methods employing sacrificial barrier layer for protection of vias during trench formation","assignee":null,"inventors":[],"filing_date":"2016-05-19T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method includes, for example, providing an intermediate semiconductor structure comprising a metallic layer, a patternable layer disposed over the metallic layer, and a hard mask disposed over the patternable layer, the intermediate semiconductor structure comprising a plurality of vias extending through the hard mask onto the metallic layer, depositing a sacrificial barrier layer over the intermediate semiconductor structure and in the plurality of vias, removing a portion of the sacrificial barrier layer between the plurality of vias while maintaining a portion of the sacrificial barrier layer in the plurality of vias, forming a trench in the patternable layer between the removed portion of the sacrificial barrier layer and the plurality of vias, and removing the remaining portions of the sacrificial barrier layer from the plurality of vias."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods employing sacrificial barrier layer for protection of vias during trench formation","description":"A method includes, for example, providing an intermediate semiconductor structure comprising a metallic layer, a patternable layer disposed over the metallic layer, and a hard mask disposed over the p","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799559","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799559","citation_suggestion":"Patentable. \"Methods employing sacrificial barrier layer for protection of vias during trench formation\" (US-9799559). https://patentable.app/patents/US-9799559","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799559","json":"https://patentable.app/api/llm-context/US-9799559","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:39:04.802Z"}