{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799567","patent":{"patent_number":"US-9799567","title":"Method of forming source/drain contact","assignee":null,"inventors":[],"filing_date":"2014-10-23T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of fabricating a semiconductor device is disclosed. The method includes forming a gate structure over a substrate. The gate structure includes a first hard mask layer. The method also includes forming a source/drain (S/D) feature in the substrate adjacent to the gate structure, forming a sidewall spacer along sidewalls of the gate structure. The sidewall spacer has an outer edge at its upper portion facing away from the gate structure. The method also includes forming a second spacer along sidewalls of the gate structure and along the outer edge of the sidewall spacer, forming dielectric layers over the gate structure, forming a trench extending through the dielectric layers to expose the source/drain feature while the gate structure is protected by the first hard mask layer and the sidewall spacer with the second spacer. The method also includes forming a contact feature in the trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming source/drain contact","description":"A method of fabricating a semiconductor device is disclosed. The method includes forming a gate structure over a substrate. The gate structure includes a first hard mask layer. The method also include","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799567","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799567","citation_suggestion":"Patentable. \"Method of forming source/drain contact\" (US-9799567). https://patentable.app/patents/US-9799567","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799567","json":"https://patentable.app/api/llm-context/US-9799567","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:39:20.791Z"}