{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799572","patent":{"patent_number":"US-9799572","title":"Manufacturing method of semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-10-21T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"Degradation of reliability of a semiconductor device is prevented. An electrode pad included mainly of aluminum is formed over a main surface of a semiconductor wafer. Subsequently, a first insulating member and a second insulating member are formed over the main surface of the semiconductor wafer so as to cover the electrode pad, and thereafter an opening portion that exposes a surface of the electrode pad is formed in the first insulating member and the second insulating member by a dry etching method using an etching gas including a halogen-based gas. Thereafter, an oxide film with a thickness of 2 nm to 6 nm is formed over the exposed surface of the electrode pad by performing a heat treatment at 200° C. to 300° C. in an air atmosphere, and then the semiconductor wafer is stored."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacturing method of semiconductor device","description":"Degradation of reliability of a semiconductor device is prevented. An electrode pad included mainly of aluminum is formed over a main surface of a semiconductor wafer. Subsequently, a first insulating","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799572","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799572","citation_suggestion":"Patentable. \"Manufacturing method of semiconductor device\" (US-9799572). https://patentable.app/patents/US-9799572","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799572","json":"https://patentable.app/api/llm-context/US-9799572","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:48:39.841Z"}