{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799592","patent":{"patent_number":"US-9799592","title":"Semicondutor device with through-silicon via-less deep wells","assignee":null,"inventors":[],"filing_date":"2013-11-19T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"Methods and systems for a semiconductor device with through-silicon via-less deep wells are disclosed and may include forming a mask pattern on a silicon carrier, etching wells in the silicon carrier, and forming metal contacts in the etched wells, wherein the metal contacts comprise a plurality of deposited metal layers. Redistribution layers may be formed on a subset of the contacts and a dielectric layer may be formed on the silicon carrier and formed redistribution layers. Vias may be formed through the dielectric layer to a second subset of the contacts and second redistribution layers may be formed on the dielectric layer. A semiconductor die may be electrically coupled to the second formed redistribution layers and formed vias. The semiconductor die and top surface of the dielectric layer may be encapsulated and the silicon carrier may be thinned to a thickness of the contacts or may be completely removed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semicondutor device with through-silicon via-less deep wells","description":"Methods and systems for a semiconductor device with through-silicon via-less deep wells are disclosed and may include forming a mask pattern on a silicon carrier, etching wells in the silicon carrier,","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799592","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799592","citation_suggestion":"Patentable. \"Semicondutor device with through-silicon via-less deep wells\" (US-9799592). https://patentable.app/patents/US-9799592","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799592","json":"https://patentable.app/api/llm-context/US-9799592","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:50:22.891Z"}