{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799621","patent":{"patent_number":"US-9799621","title":"Semiconductor device and method of forming duplex plated bump-on-lead pad over substrate for finer pitch between adjacent traces","assignee":null,"inventors":[],"filing_date":"2014-07-17T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A semiconductor device has a substrate. A conductive layer is formed over the substrate. A duplex plated bump on lead pad is formed over the substrate. An insulating layer is formed over the conductive layer and the substrate. A portion of the insulating over the duplex plated bump on lead pad is removed using a laser direct ablation process. The insulating layer is a lamination layer. The duplex plated bump on lead pad has a wide bump on lead pad. A semiconductor die is mounted over the substrate. The semiconductor die has a composite conductive interconnect structure. The semiconductor die has a first bump and a second bump with a pitch ranging from 90-150 micrometers between the first bump and the second bump. A duplex plated contact pad is formed on a surface of the substrate opposite the duplex plated bump-on-lead pad."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of forming duplex plated bump-on-lead pad over substrate for finer pitch between adjacent traces","description":"A semiconductor device has a substrate. A conductive layer is formed over the substrate. A duplex plated bump on lead pad is formed over the substrate. An insulating layer is formed over the conductiv","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799621","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799621","citation_suggestion":"Patentable. \"Semiconductor device and method of forming duplex plated bump-on-lead pad over substrate for finer pitch between adjacent traces\" (US-9799621). https://patentable.app/patents/US-9799621","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799621","json":"https://patentable.app/api/llm-context/US-9799621","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:35:11.327Z"}