{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799656","patent":{"patent_number":"US-9799656","title":"Semiconductor device having a gate stack with tunable work function","assignee":null,"inventors":[],"filing_date":"2017-01-03T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":11,"abstract":"A method for fabricating a gate stack of a semiconductor device comprises forming a first dielectric layer over a channel region of the device, forming a first nitride layer over the first dielectric layer, depositing a scavenging layer on the first nitride layer, forming a capping layer over the scavenging layer, removing portions of the capping layer and the scavenging layer to expose a portion of the first nitride layer in a n-type field effect transistor (nFET) region of the gate stack, forming a first gate metal layer over the first nitride layer and the capping layer, depositing a second nitride layer on the first gate metal layer, and depositing a gate electrode material on the second nitride layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having a gate stack with tunable work function","description":"A method for fabricating a gate stack of a semiconductor device comprises forming a first dielectric layer over a channel region of the device, forming a first nitride layer over the first dielectric ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799656","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799656","citation_suggestion":"Patentable. \"Semiconductor device having a gate stack with tunable work function\" (US-9799656). https://patentable.app/patents/US-9799656","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799656","json":"https://patentable.app/api/llm-context/US-9799656","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:15:57.810Z"}