{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799657","patent":{"patent_number":"US-9799657","title":"Method of manufacturing a three-dimensional semiconductor memory device","assignee":null,"inventors":[],"filing_date":"2014-06-23T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"The inventive concepts provide methods of manufacturing a semiconductor device. The method includes forming a thin layer structure including insulating layers and sacrificial layers alternately and repeatedly stacked on a substrate, forming a through-hole penetrating the thin layer structure and exposing the substrate, forming a semiconductor layer covering an inner sidewall of the through-hole and partially filling the through-hole, oxidizing a first portion of the semiconductor layer to form a first insulating layer, and injecting oxygen atoms into a second portion of the semiconductor layer. An oxygen atomic concentration of the second portion is lower than that of the first insulating layer. Oxidizing the first portion and injecting the oxygen atoms into the second portion are performed using an oxidation process at the same time."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing a three-dimensional semiconductor memory device","description":"The inventive concepts provide methods of manufacturing a semiconductor device. The method includes forming a thin layer structure including insulating layers and sacrificial layers alternately and re","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799657","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799657","citation_suggestion":"Patentable. \"Method of manufacturing a three-dimensional semiconductor memory device\" (US-9799657). https://patentable.app/patents/US-9799657","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799657","json":"https://patentable.app/api/llm-context/US-9799657","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:46:47.174Z"}