{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799660","patent":{"patent_number":"US-9799660","title":"Stable and reliable FinFET SRAM with improved beta ratio","assignee":null,"inventors":[],"filing_date":"2016-05-11T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"Fabrication method for a semiconductor memory device and structure are provided, which includes: providing at least two mask layers over a pair of fin structures extended above a substrate, wherein a first mask layer of the at least two mask layers is orthogonal to a second mask layer of the at least two mask layers; and patterning the pair of fin structures to define a pass-gate transistor, wherein the first mask layer facilitates removing of a portion of a first fin structure of the pair of fin structures to define a first pass-gate fin portion of the pass-gate transistor, and the second mask layer protects a second fin structure of the pair of fin structures to define a second pass-gate fin portion of the pass-gate transistor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Stable and reliable FinFET SRAM with improved beta ratio","description":"Fabrication method for a semiconductor memory device and structure are provided, which includes: providing at least two mask layers over a pair of fin structures extended above a substrate, wherein a ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799660","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799660","citation_suggestion":"Patentable. \"Stable and reliable FinFET SRAM with improved beta ratio\" (US-9799660). https://patentable.app/patents/US-9799660","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799660","json":"https://patentable.app/api/llm-context/US-9799660","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:24:25.971Z"}