{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799662","patent":{"patent_number":"US-9799662","title":"Antifuse-type one time programming memory cell and array structure with same","assignee":null,"inventors":[],"filing_date":"2016-01-13T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["G11C","H01L","H01L","H01L"],"num_claims":3,"abstract":"An antifuse-type OTP memory cell has following structures. A first doped region, a second doped region, a third doped region and a fourth doped region are formed in a well region. A gate oxide layer covers the surface of the well region. A first gate is formed on the gate oxide layer and spanned over the first doped region and the second doped region. The first gate is connected with a word line. A second gate is formed on the gate oxide layer and spanned over the second doped region and the third doped region. The second gate is connected with an antifuse control line. A third gate is formed on the gate oxide layer and spanned over the third doped region and the fourth doped region. The third gate is connected with an isolation control line."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Antifuse-type one time programming memory cell and array structure with same","description":"An antifuse-type OTP memory cell has following structures. A first doped region, a second doped region, a third doped region and a fourth doped region are formed in a well region. A gate oxide layer c","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799662","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799662","citation_suggestion":"Patentable. \"Antifuse-type one time programming memory cell and array structure with same\" (US-9799662). https://patentable.app/patents/US-9799662","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799662","json":"https://patentable.app/api/llm-context/US-9799662","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:04:49.441Z"}