{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799665","patent":{"patent_number":"US-9799665","title":"Method for forming semiconductor device structure","assignee":null,"inventors":[],"filing_date":"2017-05-24T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A method for forming a semiconductor device structure is provided. The method includes forming a mask layer over a substrate. The method includes forming a first isolation structure and a second isolation structure passing through the mask layer and penetrating into the substrate. The method includes thinning the mask layer to expose a first portion of the first isolation structure and a second portion of the second isolation structure. The method includes partially removing the first portion, the second portion, the third portion, and the fourth portion. The method includes removing the thinned mask layer. The method includes forming a first gate over the substrate and between the first isolation structure and the second isolation structure. The method includes forming a dielectric layer over the first gate. The method includes forming a second gate over the dielectric layer and above the first gate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming semiconductor device structure","description":"A method for forming a semiconductor device structure is provided. The method includes forming a mask layer over a substrate. The method includes forming a first isolation structure and a second isola","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799665","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799665","citation_suggestion":"Patentable. \"Method for forming semiconductor device structure\" (US-9799665). https://patentable.app/patents/US-9799665","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799665","json":"https://patentable.app/api/llm-context/US-9799665","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:03:46.962Z"}