{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799672","patent":{"patent_number":"US-9799672","title":"Memory device having cell over periphery (COP) structure, memory package and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-02-03T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"A memory device includes a semiconductor substrate, a peripheral circuit formed on a top surface of the semiconductor substrate, a lower insulation layer covering the peripheral circuit, a base layer formed on the lower insulation layer, a memory cell array formed on the base layer, an upper insulation layer covering the memory cell array and a plurality of input-output pads formed on a bottom surface of the semiconductor substrate. At least one of the input-output pads is disposed to be overlapped with a portion of the memory cell array in a vertical direction. The sizes of the memory device and the memory package including the memory device may be reduced through the COP structure and efficient arrangement of the input-output pads."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device having cell over periphery (COP) structure, memory package and method of manufacturing the same","description":"A memory device includes a semiconductor substrate, a peripheral circuit formed on a top surface of the semiconductor substrate, a lower insulation layer covering the peripheral circuit, a base layer ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799672","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799672","citation_suggestion":"Patentable. \"Memory device having cell over periphery (COP) structure, memory package and method of manufacturing the same\" (US-9799672). https://patentable.app/patents/US-9799672","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799672","json":"https://patentable.app/api/llm-context/US-9799672","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:21:16.913Z"}