{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799676","patent":{"patent_number":"US-9799676","title":"Semiconductor device, FinFET transistor and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2016-06-01T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"The present disclosure provides semiconductor devices, fin field-effect transistors and fabrication methods thereof. An exemplary fin field-effect transistor includes a semiconductor substrate; an insulation layer configured for inhibiting a short channel effect and increasing a heat dissipation efficiency of the fin field-effect transistor formed over the semiconductor substrate; at least one fin formed over the insulation layer; a gate structure crossing over at least one fin and covering top and side surfaces of the fin formed over the semiconductor substrate; and a source formed in the fin at one side of the gate structure and a drain formed in the fin at the other side of the gate structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device, FinFET transistor and fabrication method thereof","description":"The present disclosure provides semiconductor devices, fin field-effect transistors and fabrication methods thereof. An exemplary fin field-effect transistor includes a semiconductor substrate; an ins","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799676","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799676","citation_suggestion":"Patentable. \"Semiconductor device, FinFET transistor and fabrication method thereof\" (US-9799676). https://patentable.app/patents/US-9799676","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799676","json":"https://patentable.app/api/llm-context/US-9799676","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:58:59.886Z"}