{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799729","patent":{"patent_number":"US-9799729","title":"Method of manufacturing a semiconductor device with field electrode structures, gate structures and auxiliary diode structures","assignee":null,"inventors":[],"filing_date":"2017-01-06T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H02M","H02M"],"num_claims":20,"abstract":"A method of manufacturing a semiconductor device includes: forming field electrode structures extending in a direction vertical to a first surface in a semiconductor body; forming cell mesas from portions of the semiconductor body between the field electrode structures, including body zones forming first pn junctions with a drift zone; forming gate structures between the field electrode structures and configured to control a current flow through the body zones; and forming auxiliary diode structures with a forward voltage lower than the first pn junctions and electrically connected in parallel with the first pn junctions, wherein semiconducting portions of the auxiliary diode structures are formed in the cell mesas."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing a semiconductor device with field electrode structures, gate structures and auxiliary diode structures","description":"A method of manufacturing a semiconductor device includes: forming field electrode structures extending in a direction vertical to a first surface in a semiconductor body; forming cell mesas from port","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799729","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799729","citation_suggestion":"Patentable. \"Method of manufacturing a semiconductor device with field electrode structures, gate structures and auxiliary diode structures\" (US-9799729). https://patentable.app/patents/US-9799729","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799729","json":"https://patentable.app/api/llm-context/US-9799729","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:14:46.480Z"}