{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799730","patent":{"patent_number":"US-9799730","title":"FINFETs with high quality source/drain structures","assignee":null,"inventors":[],"filing_date":"2015-05-28T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":11,"abstract":"A semiconductor structure is provided that includes a silicon germanium alloy fin located on a portion of a topmost surface of an insulator layer. A functional gate structure straddles a portion of the silicon germanium alloy fin and is located on other portions of the topmost surface of the insulator layer. A source structure is located on one side of the functional gate structure and a drain structure is located on another side of the functional gate structure. The source structure and the drain structure surround the other portions of the silicon germanium alloy fin and are located on a germanium graded silicon-containing region that is present at a footprint of the other portions of the silicon germanium alloy fin."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FINFETs with high quality source/drain structures","description":"A semiconductor structure is provided that includes a silicon germanium alloy fin located on a portion of a topmost surface of an insulator layer. A functional gate structure straddles a portion of th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799730","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799730","citation_suggestion":"Patentable. \"FINFETs with high quality source/drain structures\" (US-9799730). https://patentable.app/patents/US-9799730","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799730","json":"https://patentable.app/api/llm-context/US-9799730","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:52:13.556Z"}