{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799732","patent":{"patent_number":"US-9799732","title":"Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor device","assignee":null,"inventors":[],"filing_date":"2013-03-18T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":2,"abstract":"A P+ type region, a p-type region, and a P− type region are disposed in a surface layer of a silicon carbide substrate base and are disposed in a breakdown voltage structure portion surrounding an active region to make up an element structure of Schottky junction. The p− type region surrounds the P+ type region and the p-type region to form a junction termination structure. A Schottky electrode forms a Schottky junction with an n-type silicon carbide epitaxial layer. The Schottky electrode and an electrode pad have end portions positioned on the P+ type region and the end portion of the Schottky electrode is exposed from the end portion of the electrode pad. As a result, the region of the breakdown voltage structure portion can be made smaller while the active region can be made larger, and a semiconductor device is easily fabricated."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor device","description":"A P+ type region, a p-type region, and a P− type region are disposed in a surface layer of a silicon carbide substrate base and are disposed in a breakdown voltage structure portion surrounding an act","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799732","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799732","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor device\" (US-9799732). https://patentable.app/patents/US-9799732","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799732","json":"https://patentable.app/api/llm-context/US-9799732","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:58:45.827Z"}