{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799734","patent":{"patent_number":"US-9799734","title":"Semiconductor device and manufacturing method for same, as well as power conversion device","assignee":null,"inventors":[],"filing_date":"2013-06-17T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":12,"abstract":"Provided is a vertical MOSFET in which a conduction deterioration phenomenon is prevented during a current return operation and an on-voltage is low during the current return operation. A semiconductor device includes a hole barrier region that is provided between a second-conductivity-type body region and a first-conductivity-type epitaxial layer below a second-conductivity-type body contact region and functions as a potential barrier to a hole which flows from a source electrode to the first-conductivity-type epitaxial layer through the second-conductivity-type body contact region and the second-conductivity-type body region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method for same, as well as power conversion device","description":"Provided is a vertical MOSFET in which a conduction deterioration phenomenon is prevented during a current return operation and an on-voltage is low during the current return operation. A semiconducto","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799734","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799734","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method for same, as well as power conversion device\" (US-9799734). https://patentable.app/patents/US-9799734","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799734","json":"https://patentable.app/api/llm-context/US-9799734","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:52:16.654Z"}