{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799736","patent":{"patent_number":"US-9799736","title":"High acceptor level doping in silicon germanium","assignee":null,"inventors":[],"filing_date":"2016-07-20T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A gallium-doped sacrificial epitaxial or polycrystalline germanium layer is formed on a silicon germanium substrate having a high percentage of germanium followed by annealing to diffuse the gallium into the silicon germanium substrate. The germanium layer is selectively removed to expose the surface of a gallium-doped silicon germanium region within the silicon germanium substrate. The process has application to the formation of electrically conductive regions within integrated circuits such as source/drain regions and junctions without the introduction of carbon into such regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High acceptor level doping in silicon germanium","description":"A gallium-doped sacrificial epitaxial or polycrystalline germanium layer is formed on a silicon germanium substrate having a high percentage of germanium followed by annealing to diffuse the gallium i","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799736","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799736","citation_suggestion":"Patentable. \"High acceptor level doping in silicon germanium\" (US-9799736). https://patentable.app/patents/US-9799736","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799736","json":"https://patentable.app/api/llm-context/US-9799736","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:10:52.578Z"}