{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799743","patent":{"patent_number":"US-9799743","title":"Trenched power semiconductor element","assignee":null,"inventors":[],"filing_date":"2016-11-22T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":15,"abstract":"A trenched power semiconductor element, a trenched-gate structure thereof being in an element trench of an epitaxial layer and including at least a shielding electrode, a shielding dielectric layer, a gate electrode, an insulating separation layer, and a gate insulating layer. The shielding electrode is disposed at the bottom of the element trench, the shielding dielectric layer is disposed at a lower portion of the element trench, surrounding the shielding electrode to separate the shielding electrode from the epitaxial layer, wherein the top portion of the shielding dielectric layer includes a hole. The gate electrode is disposed above the shielding electrode, being separated from the hole at a predetermined distance through the insulating separation layer. The insulating separation layer is disposed between the shielding dielectric layer and the gate electrode layer to seal the hole."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Trenched power semiconductor element","description":"A trenched power semiconductor element, a trenched-gate structure thereof being in an element trench of an epitaxial layer and including at least a shielding electrode, a shielding dielectric layer, a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799743","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799743","citation_suggestion":"Patentable. \"Trenched power semiconductor element\" (US-9799743). https://patentable.app/patents/US-9799743","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799743","json":"https://patentable.app/api/llm-context/US-9799743","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:18:02.216Z"}