{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799755","patent":{"patent_number":"US-9799755","title":"Method for manufacturing memory device and method for manufacturing shallow trench isolation","assignee":null,"inventors":[],"filing_date":"2016-09-14T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"A method for manufacturing a memory device includes forming trenches in a substrate to define an active region, filling an insulation material in the trenches, treating at least one portion of the insulation material, removing an upper portion of the insulation material from the trenches, so as to expose upper portions of side surfaces of the active region and to convert remaining portions of the insulation material in the trenches to shallow trench isolation (STI) disposed on opposite sides of the active region, forming a lower oxide layer, a middle charge trapping layer, and an upper oxide layer which cover the exposed upper portions of the side surfaces of the active region, an upper surface of the active region between the side surfaces of the active region, and the STI, and forming a gate layer on the upper oxide layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing memory device and method for manufacturing shallow trench isolation","description":"A method for manufacturing a memory device includes forming trenches in a substrate to define an active region, filling an insulation material in the trenches, treating at least one portion of the ins","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799755","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799755","citation_suggestion":"Patentable. \"Method for manufacturing memory device and method for manufacturing shallow trench isolation\" (US-9799755). https://patentable.app/patents/US-9799755","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799755","json":"https://patentable.app/api/llm-context/US-9799755","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:16:26.978Z"}