{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9799758","patent":{"patent_number":"US-9799758","title":"Semiconductor device and semiconductor device manufacturing method","assignee":null,"inventors":[],"filing_date":"2016-10-17T00:00:00.000Z","publication_date":"2017-10-24T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":13,"abstract":"A semiconductor device and manufacturing method achieve miniaturization, prevent rise in threshold voltage and on-state voltage, and prevent decrease in breakdown resistance. N+-type emitter region and p++-type contact region are repeatedly alternately disposed in a first direction in which a trench extends in stripe form in a mesa portion sandwiched between trench gates. P+-type region covers an end portion on lower side of junction interface between n+-type emitter region and p++-type contact region. Formation of trench gate structure is such that n+-type emitter region is selectively formed at predetermined intervals in the first direction in the mesa portion by first ion implantation. P+-type region is formed less deeply than n+-type emitter region in the entire mesa portion by second ion implantation. The p++-type contact region is selectively formed inside the p+-type region by third ion implantation. N+-type emitter region and p++-type contact region are diffused and brought into contact."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and semiconductor device manufacturing method","description":"A semiconductor device and manufacturing method achieve miniaturization, prevent rise in threshold voltage and on-state voltage, and prevent decrease in breakdown resistance. N+-type emitter region an","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9799758","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9799758","citation_suggestion":"Patentable. \"Semiconductor device and semiconductor device manufacturing method\" (US-9799758). https://patentable.app/patents/US-9799758","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9799758","json":"https://patentable.app/api/llm-context/US-9799758","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:38:32.630Z"}