{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9805780","patent":{"patent_number":"US-9805780","title":"Nonvolatile memory with magnetoresistive element and transistor","assignee":null,"inventors":[],"filing_date":"2016-09-16T00:00:00.000Z","publication_date":"2017-10-31T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":10,"abstract":"A nonvolatile memory of an embodiment includes: first through fifth wirings; and a memory cell including: a first circuit including a first magnetoresistive element and a first select transistor, the first magnetoresistive element and the first select transistor being electrically connected in series, the first magnetoresistive element including a first reference layer, a first storage layer, and a first nonmagnetic layer between the first reference layer and the first storage layer; a second circuit including a second magnetoresistive element and a second select transistor, the second magnetoresistive element and the second select transistor being electrically connected in series, the second magnetoresistive element including a second reference layer, a second storage layer, and a second nonmagnetic layer between the second reference layer and the second storage layer; a third circuit including first and second transistors; and a fourth circuit including third and fourth transistors."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nonvolatile memory with magnetoresistive element and transistor","description":"A nonvolatile memory of an embodiment includes: first through fifth wirings; and a memory cell including: a first circuit including a first magnetoresistive element and a first select transistor, the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9805780","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9805780","citation_suggestion":"Patentable. \"Nonvolatile memory with magnetoresistive element and transistor\" (US-9805780). https://patentable.app/patents/US-9805780","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9805780","json":"https://patentable.app/api/llm-context/US-9805780","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:21:01.628Z"}