{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9805794","patent":{"patent_number":"US-9805794","title":"Enhanced erasing of two-terminal memory","assignee":null,"inventors":[],"filing_date":"2015-05-19T00:00:00.000Z","publication_date":"2017-10-31T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":24,"abstract":"Two-terminal memory can be set to a first state (e.g., conductive state) in response to a program pulse, or set a second state (e.g., resistive state) in response to an erase pulse. These pulses generally provide a voltage difference between the two terminals of the memory cell. Certain electrical characteristics associated with the pulses can be manipulated in order to enhance the efficacy of the pulse. For example, the pulse can be enhanced or improved to reduce power-consumption associated with the pulse, reduce a number of pulses used to successfully set the state of the memory cell, reduce wear or damage to the memory cell, or to improve Ion or Ioff distribution associated with changing the state of the memory cell."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Enhanced erasing of two-terminal memory","description":"Two-terminal memory can be set to a first state (e.g., conductive state) in response to a program pulse, or set a second state (e.g., resistive state) in response to an erase pulse. These pulses gener","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9805794","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9805794","citation_suggestion":"Patentable. \"Enhanced erasing of two-terminal memory\" (US-9805794). https://patentable.app/patents/US-9805794","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9805794","json":"https://patentable.app/api/llm-context/US-9805794","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:22:59.304Z"}