{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9805795","patent":{"patent_number":"US-9805795","title":"Zero leakage, high noise margin coupled giant spin hall based retention latch","assignee":null,"inventors":[],"filing_date":"2016-09-14T00:00:00.000Z","publication_date":"2017-10-31T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":19,"abstract":"A non-volatile data retention circuit, which is configured to store complementary volatile charge states of an external latch, comprises a coupled giant spin hall latch configured to generate and store complementary non-volatile spin states corresponding to the complementary volatile charge states of the external latch in response to receiving a charge current from the external latch, and to generate a differential charge current signal corresponding to the complementary non-volatile spin states in response to application of a read voltage, a write switch coupled to the coupled giant spin hall latch and configured to selectively enable flow of the charge current from the external latch to the coupled giant spin hall latch in response to a sleep signal, and a read switch coupled to the coupled giant spin hall latch and to selectively enable the application of the read voltage to the coupled giant spin hall latch."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Zero leakage, high noise margin coupled giant spin hall based retention latch","description":"A non-volatile data retention circuit, which is configured to store complementary volatile charge states of an external latch, comprises a coupled giant spin hall latch configured to generate and stor","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9805795","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9805795","citation_suggestion":"Patentable. \"Zero leakage, high noise margin coupled giant spin hall based retention latch\" (US-9805795). https://patentable.app/patents/US-9805795","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9805795","json":"https://patentable.app/api/llm-context/US-9805795","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:42:47.203Z"}