{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9805927","patent":{"patent_number":"US-9805927","title":"Nonvolatile semiconductor memory device","assignee":null,"inventors":[],"filing_date":"2016-04-21T00:00:00.000Z","publication_date":"2017-10-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":7,"abstract":"According to one embodiment, a nonvolatile semiconductor memory device includes a first structure having a first insulating layer, a semiconductor layer, and a second insulating layer stacked in this order in a first direction, the first structure extending in a second direction, memory cells provided on a surface of the semiconductor layer facing in a third direction, and connected in series in the second direction, and a third insulating layer contacting at least one of first and second end portions of the first structure in the second direction and not covering at least a part of an area between the first and second end portions. A lattice spacing of semiconductor atoms in the semiconductor layer in the second direction is larger than a lattice spacing of the semiconductor atoms in the semiconductor layer in the first direction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nonvolatile semiconductor memory device","description":"According to one embodiment, a nonvolatile semiconductor memory device includes a first structure having a first insulating layer, a semiconductor layer, and a second insulating layer stacked in this ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9805927","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9805927","citation_suggestion":"Patentable. \"Nonvolatile semiconductor memory device\" (US-9805927). https://patentable.app/patents/US-9805927","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9805927","json":"https://patentable.app/api/llm-context/US-9805927","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:44:59.434Z"}