{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9805930","patent":{"patent_number":"US-9805930","title":"Method of manufacturing nitride semiconductor device using laminated cap layers","assignee":null,"inventors":[],"filing_date":"2016-06-29T00:00:00.000Z","publication_date":"2017-10-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A method of manufacturing a nitride semiconductor device is provided, comprising: forming, on a substrate, a first laminated body where a first nitride semiconductor layer, a second nitride semiconductor layer and a third nitride semiconductor layer are laminated in this order; subsequent to the forming, removing a partial region of the third nitride semiconductor layer, subsequent to the removing; implanting ions to the first nitride semiconductor layer from the partial region where the third nitride semiconductor layer is removed at least through the second nitride semiconductor layer; and subsequent to the implanting the ions, annealing the first laminated body."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing nitride semiconductor device using laminated cap layers","description":"A method of manufacturing a nitride semiconductor device is provided, comprising: forming, on a substrate, a first laminated body where a first nitride semiconductor layer, a second nitride semiconduc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9805930","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9805930","citation_suggestion":"Patentable. \"Method of manufacturing nitride semiconductor device using laminated cap layers\" (US-9805930). https://patentable.app/patents/US-9805930","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9805930","json":"https://patentable.app/api/llm-context/US-9805930","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:19:54.648Z"}