{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9805936","patent":{"patent_number":"US-9805936","title":"Method for producing nickel thin film on a Si substrate by chemical vapor deposition method, and method for producing Ni silicide thin film on Si substrate","assignee":null,"inventors":[],"filing_date":"2014-09-18T00:00:00.000Z","publication_date":"2017-10-31T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":5,"abstract":"A method for producing a nickel thin film on a Si substrate by a chemical vapor deposition method, in which the nickel thin film is formed by use of a hydrocarbon-type nickel complex represented by a following formula as a raw material compound, which is a nickel complex in which a cyclopentadienyl group (Cp) or a derivative thereof and a chain or cyclic alkenyl group having 3 to 9 carbon atoms or a derivative thereof are coordinated to nickel and an element other than carbon and hydrogen is not contained in the structure, use of hydrogen as a reaction gas, and use of a film formation pressure of 1 to 150 torr and a film formation temperature of 80 to 250° C. as film formation conditions(In the formula, X represents a chain or cyclic alkenyl group having 3 to 9 carbon atoms or a derivative thereof. R1 to R5 which are substituent groups of the cyclopentadienyl group represent CnH2n+1 and n represents an integer of 0 to 6)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for producing nickel thin film on a Si substrate by chemical vapor deposition method, and method for producing Ni silicide thin film on Si substrate","description":"A method for producing a nickel thin film on a Si substrate by a chemical vapor deposition method, in which the nickel thin film is formed by use of a hydrocarbon-type nickel complex represented by a ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9805936","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9805936","citation_suggestion":"Patentable. \"Method for producing nickel thin film on a Si substrate by chemical vapor deposition method, and method for producing Ni silicide thin film on Si substrate\" (US-9805936). https://patentable.app/patents/US-9805936","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9805936","json":"https://patentable.app/api/llm-context/US-9805936","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:10:32.187Z"}