{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9805948","patent":{"patent_number":"US-9805948","title":"Selective etching process of a mask disposed on a silicon substrate","assignee":null,"inventors":[],"filing_date":"2014-11-19T00:00:00.000Z","publication_date":"2017-10-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"The method includes the steps of: a) providing a silicon substrate including a first portion covered by the mask made from a carbonaceous material and a second doped portion, the mask including, at the surface, a surface layer including implanted ionic species and an underlying layer free of implanted ionic species, b) exposing the surface layer and the second portion to a SiCl4 and Cl2 plasma so as to deposit a silicon chloride SiClx layer on the second portion and etch the surface layer, c) etching the underlying layer so as to expose the first portion, and d) etching the silicon chloride SiClx layer so as to expose the second portion."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Selective etching process of a mask disposed on a silicon substrate","description":"The method includes the steps of: a) providing a silicon substrate including a first portion covered by the mask made from a carbonaceous material and a second doped portion, the mask including, at th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9805948","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9805948","citation_suggestion":"Patentable. \"Selective etching process of a mask disposed on a silicon substrate\" (US-9805948). https://patentable.app/patents/US-9805948","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9805948","json":"https://patentable.app/api/llm-context/US-9805948","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:20:34.345Z"}