{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9805954","patent":{"patent_number":"US-9805954","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2014-12-11T00:00:00.000Z","publication_date":"2017-10-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A manufacturing method forms an oxide insulating layer and a first plasma etching treatment forms a depressed portion therein. A second plasma etching treatment forms a trench including curved lower corner portions. An oxide semiconductor film is formed in contact with a bottom portion, the curved lower corner portions, and side portions of the trench. Source and electrodes are formed to be electrically connected to the oxide semiconductor film. A gate insulating layer is formed over the oxide semiconductor film and a gate electrode is formed over the gate insulating layer. The first plasma etching treatment is performed with a first bias power and a first power of a first power source, and the second plasma etching treatment is performed with a second bias power and a second power of a second power source, wherein the second bias power is lower than the first bias power."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"A manufacturing method forms an oxide insulating layer and a first plasma etching treatment forms a depressed portion therein. A second plasma etching treatment forms a trench including curved lower c","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9805954","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9805954","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-9805954). https://patentable.app/patents/US-9805954","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9805954","json":"https://patentable.app/api/llm-context/US-9805954","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:19:59.178Z"}