{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9805988","patent":{"patent_number":"US-9805988","title":"Method of forming semiconductor structure including suspended semiconductor layer and resulting structure","assignee":null,"inventors":[],"filing_date":"2016-12-01T00:00:00.000Z","publication_date":"2017-10-31T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":16,"abstract":"One aspect of the disclosure is directed to a method of forming a semiconductor structure including: forming a fin over a substrate within a device region, the fin including alternating layers of a sacrificial material and a semiconductor material, and including a lower channel region; forming a dopant-containing layer over the fin and the substrate; exposing an upper portion of the fin by removing the dopant-containing layer from the upper portion of the fin; removing the sacrificial material from the fin thereby suspending the semiconductor material within the fin between a pair of spacers and over the lower channel region of the fin; performing an anneal to drive in dopants from the dopant-containing layer to the lower channel region of the fin; and forming an active gate over the lower channel region of the fin and substantially surrounding the suspended semiconductor material over the lower channel region of the fin."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming semiconductor structure including suspended semiconductor layer and resulting structure","description":"One aspect of the disclosure is directed to a method of forming a semiconductor structure including: forming a fin over a substrate within a device region, the fin including alternating layers of a sa","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9805988","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9805988","citation_suggestion":"Patentable. \"Method of forming semiconductor structure including suspended semiconductor layer and resulting structure\" (US-9805988). https://patentable.app/patents/US-9805988","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9805988","json":"https://patentable.app/api/llm-context/US-9805988","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:04:09.973Z"}