{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9805989","patent":{"patent_number":"US-9805989","title":"Sacrificial cap for forming semiconductor contact","assignee":null,"inventors":[],"filing_date":"2016-09-22T00:00:00.000Z","publication_date":"2017-10-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for forming a semiconductor device includes forming a fins on a substrate, forming a sacrificial gate stack over a channel region of the fins, a source/drain region with a first material on the fins, a first cap layer with a second material over the source/drain region, and a second cap layer with a third material on the first cap layer. A dielectric layer is deposited over the second cap layer. The sacrificial gate stack is removed to expose a channel region of the fins. A gate stack is formed over the channel region of the fins. A portion of the dielectric layer is removed to expose the second cap layer. The second cap layer and the first cap layer are removed to expose the source/drain region. A conductive material is deposited on the source/drain region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Sacrificial cap for forming semiconductor contact","description":"A method for forming a semiconductor device includes forming a fins on a substrate, forming a sacrificial gate stack over a channel region of the fins, a source/drain region with a first material on t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9805989","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9805989","citation_suggestion":"Patentable. \"Sacrificial cap for forming semiconductor contact\" (US-9805989). https://patentable.app/patents/US-9805989","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9805989","json":"https://patentable.app/api/llm-context/US-9805989","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:24:47.322Z"}