{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9806013","patent":{"patent_number":"US-9806013","title":"Multilayer structure for a semiconductor device and a method of forming a multilayer structure for a semiconductor device","assignee":null,"inventors":[],"filing_date":"2013-08-28T00:00:00.000Z","publication_date":"2017-10-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":35,"abstract":"A multilayer structure for a semiconductor device and a method of forming a multilayer structure for a semiconductor device. The multilayer structure comprises: a substrate having an electrically conductive portion thereon; a dielectric layer formed over the substrate; the dielectric layer comprising an opening over at least part of the electrically conductive portion; and a conductive pillar formed on the at least part of the electrically conductive portion; wherein the conductive pillar comprises walls defined by at least the opening of the dielectric layer and an opening of a patterned layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multilayer structure for a semiconductor device and a method of forming a multilayer structure for a semiconductor device","description":"A multilayer structure for a semiconductor device and a method of forming a multilayer structure for a semiconductor device. The multilayer structure comprises: a substrate having an electrically cond","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9806013","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9806013","citation_suggestion":"Patentable. \"Multilayer structure for a semiconductor device and a method of forming a multilayer structure for a semiconductor device\" (US-9806013). https://patentable.app/patents/US-9806013","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9806013","json":"https://patentable.app/api/llm-context/US-9806013","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:20:16.691Z"}