{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9806068","patent":{"patent_number":"US-9806068","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2017-01-27T00:00:00.000Z","publication_date":"2017-10-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"Inside an IGBT using GaN or SiC, light having an energy of approximately 3 [eV] is generated. Therefore, defects are caused in the gate insulating film of the IGBT. Furthermore, the charge trapped at a deep level becomes excited and moves to the channel region, thereby causing the gate threshold voltage to fluctuate from the predetermined value. Provided is a semiconductor device including a normally-ON semiconductor element that includes a first semiconductor layer capable of conductivity modulation and a first gate electrode, but does not include a gate insulating film between the first gate electrode and the first semiconductor layer; and a normally-OFF semiconductor element that includes a second semiconductor layer, a second gate electrode, and a gate insulating film between the second semiconductor layer and the second gate electrode. The normally-ON semiconductor element and the normally-OFF semiconductor element are connected in series."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"Inside an IGBT using GaN or SiC, light having an energy of approximately 3 [eV] is generated. Therefore, defects are caused in the gate insulating film of the IGBT. Furthermore, the charge trapped at ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9806068","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9806068","citation_suggestion":"Patentable. \"Semiconductor device\" (US-9806068). https://patentable.app/patents/US-9806068","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9806068","json":"https://patentable.app/api/llm-context/US-9806068","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:23:30.830Z"}