{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9806155","patent":{"patent_number":"US-9806155","title":"Split fin field effect transistor enabling back bias on fin type field effect transistors","assignee":null,"inventors":[],"filing_date":"2016-05-05T00:00:00.000Z","publication_date":"2017-10-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A method of forming the semiconductor device that may include forming a trench in a substrate, and forming a metal nitride in the trench. The method may further include forming a split fin structure from the substrate. The metal nitride is positioned in the split portion of the fin structure. The method may continue with removing the metal nitride from a source region and drain region portion of the split fin structure, in which the metal nitride remains in a channel region portion of the split fin structure. A gate structure may then be formed on a channel region portion of the fin structure. A back bias is applied to the semiconductor device using the metal nitride in the split portion of the fin structure as an electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Split fin field effect transistor enabling back bias on fin type field effect transistors","description":"A method of forming the semiconductor device that may include forming a trench in a substrate, and forming a metal nitride in the trench. The method may further include forming a split fin structure f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9806155","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9806155","citation_suggestion":"Patentable. \"Split fin field effect transistor enabling back bias on fin type field effect transistors\" (US-9806155). https://patentable.app/patents/US-9806155","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9806155","json":"https://patentable.app/api/llm-context/US-9806155","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:17:52.858Z"}