{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9806161","patent":{"patent_number":"US-9806161","title":"Integrated circuit structure having thin gate dielectric device and thick gate dielectric device","assignee":null,"inventors":[],"filing_date":"2016-04-07T00:00:00.000Z","publication_date":"2017-10-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"One aspect of the disclosure relates to and integrated circuit structure and methods of forming the same. The integrated circuit structure may include: a thin gate dielectric device on a substrate, the thin gate dielectric device including: a first interfacial layer over a set of fins within the substrate, wherein the interfacial layer has a thickness of approximately 1.0 nanometers (nm) to approximately 1.2 nm; and a thick gate dielectric device on the substrate adjacent to the thin gate dielectric device, the thick gate dielectric device including: a second interfacial layer over the set of fins within the substrate; and a nitrided oxide layer over the second interfacial layer, wherein the nitrided oxide layer includes a thickness of approximately 3.5 nm to approximately 5.0 nm."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated circuit structure having thin gate dielectric device and thick gate dielectric device","description":"One aspect of the disclosure relates to and integrated circuit structure and methods of forming the same. The integrated circuit structure may include: a thin gate dielectric device on a substrate, th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9806161","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9806161","citation_suggestion":"Patentable. \"Integrated circuit structure having thin gate dielectric device and thick gate dielectric device\" (US-9806161). https://patentable.app/patents/US-9806161","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9806161","json":"https://patentable.app/api/llm-context/US-9806161","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:01:39.592Z"}