{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9806168","patent":{"patent_number":"US-9806168","title":"Semiconductor devices and methods for fabricating the same","assignee":null,"inventors":[],"filing_date":"2016-01-06T00:00:00.000Z","publication_date":"2017-10-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":19,"abstract":"The inventive concept relates to a semiconductor device and a method for fabricating the same. The semiconductor device comprises active patterns protruding from a substrate, an interlayer dielectric layer disposed on the substrate and including grooves exposing the active patterns, and gate electrodes in the grooves. The grooves include a first groove having a first width and a second groove having a second width greater than the first width. The gate electrodes include a first gate electrode in the first groove, and a second gate electrode in the second groove. Each of the first and second gate electrodes includes a first work function conductive pattern on a bottom surface and sidewalls of corresponding one of the first and second grooves, and a second work function conductive pattern on the first work function conductive pattern."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices and methods for fabricating the same","description":"The inventive concept relates to a semiconductor device and a method for fabricating the same. The semiconductor device comprises active patterns protruding from a substrate, an interlayer dielectric ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9806168","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9806168","citation_suggestion":"Patentable. \"Semiconductor devices and methods for fabricating the same\" (US-9806168). https://patentable.app/patents/US-9806168","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9806168","json":"https://patentable.app/api/llm-context/US-9806168","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:16:55.503Z"}