{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9806169","patent":{"patent_number":"US-9806169","title":"Semiconductor devices having a gate stack","assignee":null,"inventors":[],"filing_date":"2012-11-26T00:00:00.000Z","publication_date":"2017-10-31T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":6,"abstract":"Semiconductor devices and methods for manufacturing the same are provided. In one embodiment, the method may include: forming a first shielding layer on a substrate, and forming one of source and drain regions with the first shielding layer as a mask; forming a second shielding layer on the substrate, and forming the other of the source and drain regions with the second shielding layer as a mask; removing a portion of the second shielding layer which is next to the other of the source and drain regions; forming a gate dielectric layer, and forming a gate conductor as a spacer on a sidewall of a remaining portion of the second shielding layer; and forming a stressed interlayer dielectric layer on the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices having a gate stack","description":"Semiconductor devices and methods for manufacturing the same are provided. In one embodiment, the method may include: forming a first shielding layer on a substrate, and forming one of source and drai","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9806169","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9806169","citation_suggestion":"Patentable. \"Semiconductor devices having a gate stack\" (US-9806169). https://patentable.app/patents/US-9806169","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9806169","json":"https://patentable.app/api/llm-context/US-9806169","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:19:11.842Z"}