{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9806171","patent":{"patent_number":"US-9806171","title":"Method for making source and drain regions of a MOSFET with embedded germanium-containing layers having different germanium concentration","assignee":null,"inventors":[],"filing_date":"2016-05-09T00:00:00.000Z","publication_date":"2017-10-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is adjacent to the gate stack. A first silicon germanium region is in the opening, wherein the first silicon germanium region has a first germanium percentage. A second silicon germanium region is over the first silicon germanium region, wherein the second silicon germanium region has a second germanium percentage higher than the first germanium percentage. A third silicon germanium region is over the second silicon germanium region, wherein the third silicon germanium region has a third germanium percentage lower than the second germanium percentage."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for making source and drain regions of a MOSFET with embedded germanium-containing layers having different germanium concentration","description":"An integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is adjacent to the gate stack. A fi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9806171","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9806171","citation_suggestion":"Patentable. \"Method for making source and drain regions of a MOSFET with embedded germanium-containing layers having different germanium concentration\" (US-9806171). https://patentable.app/patents/US-9806171","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9806171","json":"https://patentable.app/api/llm-context/US-9806171","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:32:43.382Z"}