{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9806174","patent":{"patent_number":"US-9806174","title":"Double-resurf LDMOS with drift and PSURF implants self-aligned to a stacked gate “bump” structure","assignee":null,"inventors":[],"filing_date":"2016-09-01T00:00:00.000Z","publication_date":"2017-10-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A double-RESURF LDMOS transistor has a gate dielectric structure including a shallow field “bump” oxide region and an optional raised dielectric structure that provides a raised support for the LDMOS transistor's polysilicon gate electrode. Fabrication of the shallow field oxide region is performed through a hard “bump” mask and controlled such that the bump oxide extends a minimal depth into the LDMOS transistor's drift (channel) region. The hard “bump” mask is also utilized to produce an N-type drift (N-drift) implant region and a P-type surface effect (P-surf) implant region, whereby these implants are “self-aligned” to the gate dielectric structure. The N-drift implant is maintained at Vdd by connection to the LDMOS transistor's drain diffusion. An additional Boron implant is utilized to form a P-type buried layer that connects the P-surf implant to the P-body region of the LDMOS transistor, whereby the P-surf implant is maintained at 0V."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Double-resurf LDMOS with drift and PSURF implants self-aligned to a stacked gate “bump” structure","description":"A double-RESURF LDMOS transistor has a gate dielectric structure including a shallow field “bump” oxide region and an optional raised dielectric structure that provides a raised support for the LDMOS ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9806174","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9806174","citation_suggestion":"Patentable. \"Double-resurf LDMOS with drift and PSURF implants self-aligned to a stacked gate “bump” structure\" (US-9806174). https://patentable.app/patents/US-9806174","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9806174","json":"https://patentable.app/api/llm-context/US-9806174","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:18:54.797Z"}